140 GHz Radio Frequency Frontends, Indium Phosphide (InP) Low-Noise Amplifiers & Waveguide Feeds

Engineering transceivers operating across the 130-175 GHz D-band with high output power and sub-4 dB noise figures.

Indium Phosphide (InP) High-Electron-Mobility Transistors

Conventional silicon CMOS suffers severe gain drop-off above 100 GHz. ISACRF integrates 50 nm InP HEMT technologies delivering +18 dBm saturated output power (Psat) and a 3.8 dB noise figure at 140 GHz, ensuring radar echo sensitivity at 200 meters.

Low-Loss Micromachined Sub-THz Waveguide Transitions

By transitioning on-chip coplanar waveguides directly to WR-6.8 rectangular waveguides via micromachined quartz probe antennas, insertion loss is clamped below 0.6 dB across the entire 30 GHz modulation bandwidth.

130-175 GHz D-band operational spectrum with 30 GHz continuous bandwidth
Indium Phosphide (InP) HEMT amplifiers with +18 dBm output power
Sub-4 dB receiver noise figure for long-range radar echo detection
Micromachined WR-6.8 waveguide transitions with <0.6 dB insertion loss

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